| Publication CODE |
Title |
| IEC 63275-2:2022 (2022-05) |
SEMICONDUCTOR DEVICES - RELIABILITY TEST METHOD FOR SILICON CARBIDE DISCRETE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS - PART 2: TEST METHOD FOR BIPOLAR DEGRADATION DUE TO BODY DIODE OPERATION |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
42.00 €
|
20. |
Description
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47
SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2022-05-11 |
| ICS-Code (International Standards Classification) |
31.080.30
|
| NBN Status |
New |
|
| IEC publication date |
2022-05-11 |
| IEC stability date |
2026-12-31 |
| IEC file modification date |
2022-05-11 |
| IEC last modification date |
2022-05-11 |
|
