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Publication details

Publication CODE Title
IEC 63068-2:2019 (2019-01) SEMICONDUCTOR DEVICES - NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS in SILICON CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES - PART 2: TEST METHOD FOR DEFECTS USING OPTICAL INSPECTION
 
Price Excl. VAT Total number of pages, tables and drawings
159.00 € 25.
Description
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
Class  C990  (IEC PUBLICATIONS IEC PUBLICATIONS)
Available files
EN version

Status
Status IEC PUBLICATION
Situation Currently active
Origin
Committee TC 47
SEMICONDUCTOR DEVICES
Responsible Ir DELENS Marc
Approval
BEC Approval 2019-01-30
ICS-Code (International Standards Classification) 31.080.99
NBN Status New
IEC publication date 2019-01-30
IEC stability date 2021-12-31
IEC file modification date 2019-01-30
IEC last modification date 2020-01-06