Publication CODE |
Title |
IEC 63068-2:2019 (2019-01) |
SEMICONDUCTOR DEVICES - NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS in SILICON CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES - PART 2: TEST METHOD FOR DEFECTS USING OPTICAL INSPECTION |
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Price Excl. VAT |
Total number of pages, tables and drawings |
159.00 €
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25. |
Description
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
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Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
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Status |
IEC PUBLICATION |
Situation |
Currently active
|
|
Committee |
TC 47
SEMICONDUCTOR DEVICES
|
Responsible |
Ir DELENS Marc
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BEC Approval |
2019-01-30 |
ICS-Code (International Standards Classification) |
31.080.99
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NBN Status |
New |
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IEC publication date |
2019-01-30 |
IEC stability date |
2021-12-31 |
IEC file modification date |
2019-01-30 |
IEC last modification date |
2020-01-06 |
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