Publication CODE |
Title |
IEC 63068-1:2019 (2019-01) |
SEMICONDUCTOR DEVICES - NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS in SILICON CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES - PART 1: CLASSIFICATION OF DEFECTS |
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Price Excl. VAT |
Total number of pages, tables and drawings |
159.00 €
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23. |
Description
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
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Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
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Status |
IEC PUBLICATION |
Situation |
Currently active
|
|
Committee |
TC 47
SEMICONDUCTOR DEVICES
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Responsible |
Ir DELENS Marc
|
BEC Approval |
2019-01-30 |
ICS-Code (International Standards Classification) |
31.080.99
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NBN Status |
New |
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IEC publication date |
2019-01-30 |
IEC stability date |
2021-12-31 |
IEC file modification date |
2019-01-30 |
IEC last modification date |
2019-01-30 |
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