| Publication CODE |
Title |
| IEC 63068-1:2019 (2019-01) |
SEMICONDUCTOR DEVICES - NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS in SILICON CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES - PART 1: CLASSIFICATION OF DEFECTS |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
159.00 €
|
23. |
Description
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47
SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2019-01-30 |
| ICS-Code (International Standards Classification) |
31.080.99
|
| NBN Status |
New |
|
| IEC publication date |
2019-01-30 |
| IEC stability date |
2021-12-31 |
| IEC file modification date |
2019-01-30 |
| IEC last modification date |
2019-01-30 |
|
