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Publication details

Publication CODE Title
IEC 63229:2021 (2021-04) SEMICONDUCTOR DEVICES - CLASSIFICATION OF DEFECTS in GALLIUM NITRIDE EPITAXIAL FILM ON SILICON CARBIDE SUBSTRATE
 
Price Excl. VAT Total number of pages, tables and drawings
159.00 € 21.
Description
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
Class  C990  (IEC PUBLICATIONS IEC PUBLICATIONS)
Available files
EN version

Status
Status IEC PUBLICATION
Situation Currently active
Origin
Committee TC 47
SEMICONDUCTOR DEVICES
Responsible Ir DELENS Marc
Approval
BEC Approval 2021-04-07
ICS-Code (International Standards Classification) 31.080.99
NBN Status New
IEC publication date 2021-04-07
IEC stability date 2025-12-31
IEC file modification date 2021-04-07
IEC last modification date 2021-04-07