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Publication details

Publication CODE Title
IEC 60749-34:2010 (2010-10) SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 34: POWER CYCLING
 
Price Excl. VAT Total number of pages, tables and drawings
42.00 € 21 P.
Description
IEC 60749-34:2010 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant changes with respect from the previous edition include:
- the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode;
- information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds.
Class  C990  (IEC PUBLICATIONS IEC PUBLICATIONS)
Available files
EN/FR version

Status
Status IEC PUBLICATION
Situation Currently active
Replaces  IEC 60749-34:2004
Origin
Committee TC 47
SEMICONDUCTOR DEVICES
Responsible Ir DELENS Marc
Approval
BEC Approval 2010-10-28
Registration 107641
ICS-Code (International Standards Classification) 31.080.01
NBN Status New
IEC publication date 2010-10-28
IEC stability date 2025-12-31
IEC last modification date 2018-01-11