| Publication CODE |
Title |
| IEC 63275-1:2022 (2022-04) |
SEMICONDUCTOR DEVICES - RELIABILITY TEST METHOD FOR SILICON CARBIDE DISCRETE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS - PART 1: TEST METHOD FOR BIAS TEMPERATURE INSTABILITY |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
85.00 €
|
25. |
Description
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47
SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2022-04-21 |
| ICS-Code (International Standards Classification) |
31.080.30
|
| NBN Status |
New |
|
| IEC publication date |
2022-04-21 |
| IEC stability date |
2026-12-31 |
| IEC file modification date |
2022-04-21 |
| IEC last modification date |
2022-04-21 |
|
