| Publication CODE |
Title |
| IEC 63011-3:2018 (2018-11) |
INTEGRATED CIRCUITS - THREE DIMENSIONAL INTEGRATED CIRCUITS - PART 3: MODEL AND MEASUREMENT CONDITIONS OF THROUGH-SILICON VIA |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
85.00 €
|
28. |
Description
IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47/SC 47A
INTEGRATED CIRCUITS
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2018-11-28 |
| ICS-Code (International Standards Classification) |
31.200
|
| NBN Status |
New |
|
| IEC publication date |
2018-11-28 |
| IEC stability date |
2024-12-31 |
| IEC file modification date |
2018-11-28 |
| IEC last modification date |
2018-12-19 |
|
