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Publication details

Publication CODE Title
IEC 60747-8:2010 (2010-12) SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS
 
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307.00 € 155 P.
Description
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006.
Class  C990  (IEC PUBLICATIONS IEC PUBLICATIONS)
Available files
EN/FR version

Status
Status IEC PUBLICATION
Situation Currently active
Replaces  IEC 60747-8-2:1993
Replaces  IEC 60747-8-3:1995
Replaces  IEC 60747-8-4:2004
Replaces  IEC 60747-8:2000
Origin
Committee TC 47/SC 47E
DISCRETE SEMICONDUCTOR DEVICES
Responsible Ir DELENS Marc
Approval
BEC Approval 2010-12-15
Registration 108110
ICS-Code (International Standards Classification) 31.080.30
NBN Status New
IEC publication date 2010-12-15
IEC stability date 2023-12-31
IEC last modification date 2017-12-03