| Publication CODE |
Title |
| IEC 60747-8:2010 (2010-12) |
SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
366.00 €
|
155 P. |
Description
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Committee |
TC 47/SC 47E
DISCRETE SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2010-12-15 |
| Registration |
108110 |
| ICS-Code (International Standards Classification) |
31.080.30
|
| NBN Status |
New |
|
| IEC publication date |
2010-12-15 |
| IEC stability date |
2023-12-31 |
| IEC last modification date |
2017-12-03 |
|
