| Publication CODE |
Title |
| IEC 62880-1:2017 (2017-08) |
SEMICONDUCTOR DEVICES - STRESS MIGRATION TEST STANDARD - PART 1: COPPER STRESS MIGRATION TEST STANDARD |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
159.00 €
|
24. |
Description
IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47
SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2017-08-23 |
| ICS-Code (International Standards Classification) |
31.080.01
|
| NBN Status |
New |
|
| IEC publication date |
2017-08-23 |
| IEC stability date |
2022-12-31 |
| IEC file modification date |
2017-08-23 |
| IEC last modification date |
2017-08-23 |
|
