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Publication details

Publication CODE Title
IEC 63068-4:2022 (2022-07) SEMICONDUCTOR DEVICES - NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS in SILICON CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES - PART 4: PROCEDURE FOR IDENTIFYING AND EVALUATING DEFECTS USING A COMBINED METHOD OF OPTICAL INSPECTION AND PHOTOLUMINESCENCE
 
Price Excl. VAT Total number of pages, tables and drawings
139.00 € 25.
Description
IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
Class  C990  (IEC PUBLICATIONS IEC PUBLICATIONS)
Available files
EN version

Status
Status IEC PUBLICATION
Situation Currently active
Origin
Committee TC 47
SEMICONDUCTOR DEVICES
Responsible Ir DELENS Marc
Approval
BEC Approval 2022-07-27
ICS-Code (International Standards Classification) 31.080.99
NBN Status New
IEC publication date 2022-07-27
IEC stability date 2026-12-31
IEC file modification date 2022-07-27
IEC last modification date 2022-07-27