Publication CODE |
Title |
NBN EN 62417:2010 (2010-05) |
SEMICONDUCTOR DEVICES - MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) |
|
Price Excl. VAT |
Total number of pages, tables and drawings |
25.00 €
|
2 P. |
Description
Provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
|
Class |
C80
(ELECTRONIC COMPONENTS GENERAL)
|
Available files
ATTENTION: Belgian registered standards (NBN EN or NBN HD) are generally
only available in English or French. Only the cover page is translated
and the document itself is in English or in French.
Very important notice: 98% of the text of the NBN EN 55XXX,
NBN EN 6XXXX comes from the IEC text which is NOT included.
This text can be ordered here:
IEC 62417:2010.
For the series NBN EN 50XXX, the standards are however complete.
|
EN version
|
FR version
|
DE version
|
|
Status |
Registered trilingual Belgian standard EN or FR or DE |
Situation |
Currently active
|
|
Committee |
TC 47
SEMICONDUCTOR DEVICES
|
Responsible |
Ir DELENS Marc
|
BEC Approval |
2010-05-01 |
NBN Approval |
2010-08-27 |
Belgian Official Journal |
2010-10-18 |
Registration |
107251 |
ICS-Code (International Standards Classification) |
31.080
|
NBN Status |
New |
|
Date of ratification (d.o.r.) |
2010-05-01 |
Date of availability (d.a.v.) |
2010-05-07 |
Date of announcement (d.o.a.) |
2010-08-01 |
Date of publication (d.o.p.) |
2011-02-01 |
Date of withdrawal former edition (d.o.w.) |
2013-05-01 |
|