| Publication CODE |
Title |
| IEC 63068-4:2022 (2022-07) |
SEMICONDUCTOR DEVICES - NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS in SILICON CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES - PART 4: PROCEDURE FOR IDENTIFYING AND EVALUATING DEFECTS USING A COMBINED METHOD OF OPTICAL INSPECTION AND PHOTOLUMINESCENCE |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
159.00 €
|
25. |
Description
IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47
SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2022-07-27 |
| ICS-Code (International Standards Classification) |
31.080.99
|
| NBN Status |
New |
|
| IEC publication date |
2022-07-27 |
| IEC stability date |
2026-12-31 |
| IEC file modification date |
2022-07-27 |
| IEC last modification date |
2022-07-27 |
|
