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Publication details

Publication CODE Title
IEC 62417:2010 (2010-04) SEMICONDUCTOR DEVICES - MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS)
 
Price Excl. VAT Total number of pages, tables and drawings
21.00 € 16 P.
Description
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
Class  C990  (IEC PUBLICATIONS IEC PUBLICATIONS)
Available files
EN/FR version

Status
Status IEC PUBLICATION
Situation Currently active
Origin
Committee TC 47
SEMICONDUCTOR DEVICES
Responsible Ir DELENS Marc
Approval
BEC Approval 2010-04-22
Registration 106122
ICS-Code (International Standards Classification) 31.080.30
NBN Status New
IEC publication date 2010-04-22
IEC stability date 2025-12-31
IEC last modification date 2018-11-22