| Publication CODE |
Title |
| IEC 63068-3:2020 (2020-07) |
SEMICONDUCTOR DEVICES - NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS in SILICON CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES - PART 3: TEST METHOD FOR DEFECTS USING PHOTOLUMINESCENCE |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
201.00 €
|
51. |
Description
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47
SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2020-07-13 |
| ICS-Code (International Standards Classification) |
31.080.99
|
| NBN Status |
New |
|
| IEC publication date |
2020-07-13 |
| IEC stability date |
2026-12-31 |
| IEC file modification date |
2020-07-13 |
| IEC last modification date |
2020-07-13 |
|
