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Publication details

Publication CODE Title
IEC 63275-2:2022 (2022-05) SEMICONDUCTOR DEVICES - RELIABILITY TEST METHOD FOR SILICON CARBIDE DISCRETE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS - PART 2: TEST METHOD FOR BIPOLAR DEGRADATION DUE TO BODY DIODE OPERATION
 
Price Excl. VAT Total number of pages, tables and drawings
42.00 € 20.
Description
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Class  C990  (IEC PUBLICATIONS IEC PUBLICATIONS)
Available files
EN/FR version

Status
Status IEC PUBLICATION
Situation Currently active
Origin
Committee TC 47
SEMICONDUCTOR DEVICES
Responsible Ir DELENS Marc
Approval
BEC Approval 2022-05-11
ICS-Code (International Standards Classification) 31.080.30
NBN Status New
IEC publication date 2022-05-11
IEC stability date 2026-12-31
IEC file modification date 2022-05-11
IEC last modification date 2022-05-11