| Publication CODE |
Title |
| IEC 63229:2021 (2021-04) |
SEMICONDUCTOR DEVICES - CLASSIFICATION OF DEFECTS in GALLIUM NITRIDE EPITAXIAL FILM ON SILICON CARBIDE SUBSTRATE |
| |
| Price Excl. VAT |
Total number of pages, tables and drawings |
|
159.00 €
|
21. |
Description
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
|
| Class |
C990
(IEC PUBLICATIONS IEC PUBLICATIONS)
|
| Status |
IEC PUBLICATION |
| Situation |
Currently active
|
|
| Committee |
TC 47
SEMICONDUCTOR DEVICES
|
| Responsible |
Ir DELENS Marc
|
| BEC Approval |
2021-04-07 |
| ICS-Code (International Standards Classification) |
31.080.99
|
| NBN Status |
New |
|
| IEC publication date |
2021-04-07 |
| IEC stability date |
2025-12-31 |
| IEC file modification date |
2021-04-07 |
| IEC last modification date |
2021-04-07 |
|
